MacDermid Alpha Electronics Solutions will exhibit at electronica 2026 (November 10–13, Munich, Germany), showing its upcoming BondPad technology, an Argomax film-laminated copper-foil solution for ...
A punch-through gate design equips the E-mode GaN HEMT with an inherent non-destructive breakdown capability.
US-based HexaTech has announced the production release of its new 100 mm diameter single crystal AlN substrate product: a milestone that builds on the three-inch substrate the company launched earlier ...
A gold-free GaN-on-silicon platform that combines high-power RF devices with robust digital logic strengthens the foundations of tomorrow’s mixed-signal circuits.
Wyn Meredith, Chair of CSconnected Ltd, joined the closing panel on building a world-class semiconductor ecosystem, alongside leaders from the Semiconductor Catapult, Cardiff University, IQE, Space ...
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